Izabella Grzegory - Curriculum Vitae#

Izabella Grzegory, physicist, graduated from Electrotechnical Institute, St Petersburg in 1983, PhD and habilitation at the Institute of Physics Polish Academy of Sciences, Warsaw, Poland. Since 1983 she is working for the Institute of High Pressure Physics , Polish Academy of Sciences, Warsaw, Poland.

A number of visits to research laboratories in Germany, United Kingdom, France, USA, Japan.

She is author and co-author of more than 440 scientific papers and book chapters (h-index: 49). Her main scientific interest is solution growth of semiconductor crystals especially gallium nitride (GaN) at very high pressures of nitrogen and application of these crystals for epitaxy and optoelectronic devices. More than 45 invited talks at international conferences.

1997 – 2010 Founder of internationally recognized Crystal Growth Group growing single crystals of GaN by High Pressure and HVPE methods and developing defect selective and photochemical etching of nitride semiconductors.

2001 – 2009 Founder and Vice-president of TopGaN Ltd, Hi-tech spin-off implementing GaN-related technologies of laser diodes fabrication.

2011 - present - Director of the Institute of high Pressure Physics, Polish Academy of Sciences.

In 1995 she got Jamieson Award (international) for best PhD Thesis in High Pressure Science and Technology and 2nd Prize in Prof. G. Bialkowski Competition for best Polish PhD Thesis in Mathematics and Physics in 1995. She was elected member of Executive Committee of the International Association for the Advancement of High Pressure Science and Technology for the term 2009-2013. Professor Grzegory served also as a ERC EP3 Panel Member for Consolidator Grants 2012-2015.